onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU220BTU_AM002 IRFU220BTU_AM002

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 135752-IRFU220BTU_AM 002 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 135752-IRFU220BTU_AM 002 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU220BTU_AM002 - 135752-IRFU220BTU_AM002 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU220BTU_AM002
135752-IRFU220BTU_AM002
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU220BTU_AM002 135752-IRFU220BTU_AM002
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 135752-IRFU220BTU_AM 002 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 4.6A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 390pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 135752-IRFU220BTU_AM002
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 4.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 390pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
200V 4.6A MOSFET Transistor
285-IRFU220BTU_AM002
200V 4.6A MOSFET Transistor 285-IRFU220BTU_AM002
MOSFET N-CH 200V 4.6A IPAK Product overview: IRFU220BTU_AM002 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 4.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFU220BTU_AM002 can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 4.6A IPAK Product overview: IRFU220BTU_AM002 from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 4.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-IRFU220BTU_AM002 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 135752-IRFU220BTU_AM002 285-IRFU220BTU_AM002
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFU220BTU_AM002 200V 4.6A MOSFET Transistor
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 2500 to 40000 milliwatts 2500 milliwatts
Unlock Full Specs
to access all available technical data