onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B IRFS634B

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069594-IRFS634B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B - 069594-IRFS634B - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS634B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069594-IRFS634B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B - 069594-IRFS634B - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B
069594-IRFS634B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B 069594-IRFS634B
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069594-IRFS634B Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 8.1A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 38nC @ 10V Max Input Capacitance: 1000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 069594-IRFS634B
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 8.1A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 450 mOhm @ 4.05A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS634B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS634B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS634B
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 069594-IRFS634B IRFS634B
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS634B Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts
PD 38000 milliwatts
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