onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS614B_FP001 IRFS614B_FP001

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047153-IRFS614B_FP0 01 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 22W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 10.5nC @ 10V Max Input Capacitance: 275pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047153-IRFS614B_FP0 01 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 22W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 10.5nC @ 10V Max Input Capacitance: 275pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS614B_FP001 - 1047153-IRFS614B_FP001 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS614B_FP001
1047153-IRFS614B_FP001
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS614B_FP001 1047153-IRFS614B_FP001
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047153-IRFS614B_FP0 01 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 22W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 2.8A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 10.5nC @ 10V Max Input Capacitance: 275pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2 Ohm @ 1.4A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047153-IRFS614B_FP001
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 22W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 10.5nC @ 10V
Max Input Capacitance: 275pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2 Ohm @ 1.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047153-IRFS614B_FP001
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS614B_FP001
Polarity N-Channel; N-Channel
V(BR)DSS 250 volts
PD 22000 milliwatts
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