onsemi Single FETs, MOSFETs IRFS350A

Description
N-Channel 400V 11.5A (Tc) 92W (Tc) Through Hole TO-3PF
Request a Quote Datasheet
Description
N-Channel 400V 11.5A (Tc) 92W (Tc) Through Hole TO-3PF
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRFS350A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFS350A-ND
Single FETs, MOSFETs IRFS350A-ND
N-Channel 400V 11.5A (Tc) 92W (Tc) Through Hole TO-3PF

N-Channel 400V 11.5A (Tc) 92W (Tc) Through Hole TO-3PF

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS350A - 1047130-IRFS350A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS350A
1047130-IRFS350A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS350A 1047130-IRFS350A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047130-IRFS350A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 92W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3PF Dimension: TO-3P-3 Full Pack Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 11.5A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 131nC @ 10V Max Input Capacitance: 2780pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 300 mOhm @ 5.75A, 10V Alternative Parts (Cross-Reference): IRFP350PBF; IRFS350A_NL; IRFP350A_NL; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047130-IRFS350A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 92W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3PF
Dimension: TO-3P-3 Full Pack
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 11.5A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 131nC @ 10V
Max Input Capacitance: 2780pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 300 mOhm @ 5.75A, 10V
Alternative Parts (Cross-Reference): IRFP350PBF; IRFS350A_NL; IRFP350A_NL;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFS350A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFS350A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFS350A
MOSFET N-CH 400V 11.5A TO3PF

MOSFET N-CH 400V 11.5A TO3PF

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFS350A-ND 1047130-IRFS350A IRFS350A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFS350A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3 Full Pack TO-3; SOT3; TO-3PF TO-3P-3 Full Pack
V(BR)DSS 400 volts
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