onsemi Single FETs, MOSFETs IRFR120ATM

Description
N-Channel 100V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet
Description
N-Channel 100V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IRFR120ATM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFR120ATM-ND
Single FETs, MOSFETs IRFR120ATM-ND
N-Channel 100V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount TO-252AA

N-Channel 100V 8.4A (Tc) 2.5W (Ta), 32W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR120ATM - 069521-IRFR120ATM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR120ATM
069521-IRFR120ATM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR120ATM 069521-IRFR120ATM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 069521-IRFR120ATM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 8.4A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 22nC @ 10V Max Input Capacitance: 480pF @ 25V Maximum Rds On at Id,Vgs: 200 mOhm @ 4.2A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 069521-IRFR120ATM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 8.4A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 22nC @ 10V
Max Input Capacitance: 480pF @ 25V
Maximum Rds On at Id,Vgs: 200 mOhm @ 4.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IRFR120ATM - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IRFR120ATM
Single FETs, MOSFETs IRFR120ATM
MOSFET N-CH 100V 8.4A TO252AA

MOSFET N-CH 100V 8.4A TO252AA

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFR120ATM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFR120ATM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFR120ATM
MOSFET N-CH 100V 8.4A TO252AA

MOSFET N-CH 100V 8.4A TO252AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRFR120ATM-ND 069521-IRFR120ATM IRFR120ATM IRFR120ATM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFR120ATM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252AA TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts 100 volts
PD 2500 to 32000 milliwatts 2500 milliwatts
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