Dual Die part consisting of a 100mA NBRT and 500mA PBRT, SC-74R 6 LEAD, 3000-REEL Product overview: IMD10AMT1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 100mA, 500mA. Search-friendly keywords include transistor, BJT, switching, amplification, Dual, 100mA, 500mA, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-IMD10AMT1G can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
Manufacturer: ON Semiconductor
Win Source Part Number: 1185556-IMD10AMT1G
Packaging: Reel
Mounting Style: SMD
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: SC-74R
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 300mV at 1mA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 1mA, 5V / 68 at 100mA, 5V
Maximum Power: 285mW
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms
TRANS NPN/PNP PREBIAS SC74R
Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR
TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:500mA; Base Input Resistor R1:130ohm; Base-Emitter Resistor R2:-; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 293-IMD10AMT1G | IMD10AMT1GOSTR-ND | 1185556-IMD10AMT1G | IMD10AMT1G | IMD10AMT1G | 50AC5239 |
| Product Name | Dual 100mA 500mA Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD10AMT1G | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - Pre-Biased | Transistor, Aec-Q101, Npn/pnp, 50V; Digital Transistor Polarity Onsemi |
| Polarity | NPN; PNP | NPN; PNP | NPN; PNP | NPN; PNP | ||
| IC(max) | 500 milliamps | 500 milliamps | ||||
| VCEO | 50 volts | 50 volts | ||||
| PD | 285 milliwatts | |||||
| TJ | -55 C (-67 F) |
