onsemi TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD10AMT1G IMD10AMT1G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1185556-IMD10AMT1G Packaging: Reel Mounting Style: SMD Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: SC-74R Manufacturer Homepage: www.onsemi.com Manufacturer Package: SOT-23-6 Thin, TSOT-23-6 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 1mA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 1mA, 5V / 68 at 100mA, 5V Maximum Power: 285mW Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1185556-IMD10AMT1G Packaging: Reel Mounting Style: SMD Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: SC-74R Manufacturer Homepage: www.onsemi.com Manufacturer Package: SOT-23-6 Thin, TSOT-23-6 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 1mA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 1mA, 5V / 68 at 100mA, 5V Maximum Power: 285mW Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD10AMT1G - 1185556-IMD10AMT1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD10AMT1G
1185556-IMD10AMT1G
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD10AMT1G 1185556-IMD10AMT1G
Manufacturer: ON Semiconductor Win Source Part Number: 1185556-IMD10AMT1G Packaging: Reel Mounting Style: SMD Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Categories: Discrete Semiconductor Products Supplier Device Package: SC-74R Manufacturer Homepage: www.onsemi.com Manufacturer Package: SOT-23-6 Thin, TSOT-23-6 Current - Collector (Ic) (Maximum): 500mA Voltage - Collector Emitter Breakdown (Maximum): 50V Current - Collector Cutoff (Maximum): 500nA Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 300mV at 1mA, 10mA DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 1mA, 5V / 68 at 100mA, 5V Maximum Power: 285mW Resistor - Base (R1): 13kOhms, 130Ohms Resistor - Emitter Base (R2): 10kOhms

Manufacturer: ON Semiconductor
Win Source Part Number: 1185556-IMD10AMT1G
Packaging: Reel
Mounting Style: SMD
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Categories: Discrete Semiconductor Products
Supplier Device Package: SC-74R
Manufacturer Homepage: www.onsemi.com
Manufacturer Package: SOT-23-6 Thin, TSOT-23-6
Current - Collector (Ic) (Maximum): 500mA
Voltage - Collector Emitter Breakdown (Maximum): 50V
Current - Collector Cutoff (Maximum): 500nA
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 300mV at 1mA, 10mA
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 1mA, 5V / 68 at 100mA, 5V
Maximum Power: 285mW
Resistor - Base (R1): 13kOhms, 130Ohms
Resistor - Emitter Base (R2): 10kOhms

Buy Now
Bipolar Transistor Arrays, Pre-Biased - IMD10AMT1GOSTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
IMD10AMT1GOSTR-ND
Bipolar Transistor Arrays, Pre-Biased IMD10AMT1GOSTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - IMD10AMT1GOSDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
IMD10AMT1GOSDKR-ND
Bipolar Transistor Arrays, Pre-Biased IMD10AMT1GOSDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - IMD10AMT1GOSCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
IMD10AMT1GOSCT-ND
Bipolar Transistor Arrays, Pre-Biased IMD10AMT1GOSCT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - IMD10AMT1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
IMD10AMT1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) IMD10AMT1G
TRANS NPN/PNP PREBIAS SC74R

TRANS NPN/PNP PREBIAS SC74R

Supplier's Site
Transistor, Aec-Q101, Npn/pnp, 50V; Digital Transistor Polarity Onsemi - 50AC5239 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Aec-Q101, Npn/pnp, 50V; Digital Transistor Polarity Onsemi
50AC5239
Transistor, Aec-Q101, Npn/pnp, 50V; Digital Transistor Polarity Onsemi 50AC5239
TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:500mA; Base Input Resistor R1:130ohm; Base-Emitter Resistor R2:-; RoHS Compliant: Yes

TRANSISTOR, AEC-Q101, NPN/PNP, 50V; Digital Transistor Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:500mA; Base Input Resistor R1:130ohm; Base-Emitter Resistor R2:-; RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
IMD10AMT1G
Bipolar Transistors - Pre-Biased IMD10AMT1G
Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR

Bipolar Transistors - Pre-Biased SURF MT BIASED RES XSTR

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1185556-IMD10AMT1G IMD10AMT1GOSTR-ND IMD10AMT1G 50AC5239 IMD10AMT1G
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - IMD10AMT1G Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Aec-Q101, Npn/pnp, 50V; Digital Transistor Polarity Onsemi Bipolar Transistors - Pre-Biased
Polarity NPN; PNP NPN; PNP NPN; PNP
Package Type SOT3; SOT23 SC-74, SOT-457 TO-3
Packing Method Tape Reel; Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Power Gain 100 dB
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