The HUFA75829D3ST is an N-channel MOSFET in a TO-252AA package, designed for high-efficiency switching applications. It has a drain-to-source voltage rating of 150 V and a continuous drain current of 18 A at 25°C case temperature, reducing to 13 A at 100°C. The maximum on-resistance is 0.110 Ω at 18 A and 10 V gate-source voltage. Power dissipation is rated at 110 W, with a thermal resistance from junction to case of 1.36 °C/W. The gate threshold voltage ranges from 2 V to 4 V, and total gate charge is up to 70 nC at 20 V. Operating and storage junction temperatures range from -55°C to 175°C. The device is compatible with automotive reliability standards per AEC-Q101 and is manufactured under ISO9000 and QS9000 quality systems.
Win Source Part Number: 965543-HUFA75829D3ST
Category: Discrete Semiconductor Products>Transistors
Series: UltraFET™
Package: Tape & Reel (TR)
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 150 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: HUFA75
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 965543-HUFA75829D3ST |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
