Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044262-HUFA75639G3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 20V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 56A, 10V
Alternative Parts (Cross-Reference): IRFP3710PBF; SSF70N10A; IXTQ75N10PSN; HUFA75639G3;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 56A TO247-3
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1044262-HUFA75639G3 | HUFA75639G3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUFA75639G3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | |
| V(BR)DSS | 100 volts | |
| PD | 200000 milliwatts |
