onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76609D3ST HUF76609D3ST

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 017082-HUF76609D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 49W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 425pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 160 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 2,500
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76609D3ST - 017082-HUF76609D3ST - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - HUF76609D3STFSTR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - HUF76609D3ST - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - HUF76609D3ST - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76609D3ST - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 100V, 10A, 175Deg C, 49W Rohs Compliant Onsemi - 54AH8830 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 017082-HUF76609D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 49W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 425pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 160 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 2,500
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76609D3ST - 017082-HUF76609D3ST - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76609D3ST
017082-HUF76609D3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76609D3ST 017082-HUF76609D3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 017082-HUF76609D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 49W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 425pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 160 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance Quantity per package: 2,500

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 017082-HUF76609D3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 49W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 425pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 160 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Quantity per package: 2,500

Buy Now Datasheet
Single FETs, MOSFETs - HUF76609D3STFSTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF76609D3STFSTR-ND
Single FETs, MOSFETs HUF76609D3STFSTR-ND
N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA

N-Channel 100V 10A (Tc) 49W (Tc) Surface Mount TO-252AA

Buy Now Datasheet
Single FETs, MOSFETs - HUF76609D3ST - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HUF76609D3ST
Single FETs, MOSFETs HUF76609D3ST
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site Datasheet
Single FETs, MOSFETs - HUF76609D3ST - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HUF76609D3ST
Single FETs, MOSFETs HUF76609D3ST
MOSFET N-CH 100V 10A TO252AA

MOSFET N-CH 100V 10A TO252AA

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
HUF76609D3ST
MOSFET HUF76609D3ST
MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate

MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76609D3ST - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76609D3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76609D3ST
MOSFET N-CH 100V 10A TO252AA

MOSFET N-CH 100V 10A TO252AA

Supplier's Site
Mosfet, N-Ch, 100V, 10A, 175Deg C, 49W Rohs Compliant Onsemi - 54AH8830 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 10A, 175Deg C, 49W Rohs Compliant Onsemi
54AH8830
Mosfet, N-Ch, 100V, 10A, 175Deg C, 49W Rohs Compliant Onsemi 54AH8830
MOSFET, N-CH, 100V, 10A, 175DEG C, 49W ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 10A, 175DEG C, 49W ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 017082-HUF76609D3ST HUF76609D3STFSTR-ND HUF76609D3ST HUF76609D3ST HUF76609D3ST 54AH8830
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76609D3ST Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 10A, 175Deg C, 49W Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts
PD 49000 milliwatts 49000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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