onsemi Single FETs, MOSFETs HUF76445S3ST

Description
N-Channel 60V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 60V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - HUF76445S3ST-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF76445S3ST-ND
Single FETs, MOSFETs HUF76445S3ST-ND
N-Channel 60V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 60V 75A (Tc) 310W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76445S3ST - 1044221-HUF76445S3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76445S3ST
1044221-HUF76445S3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76445S3ST 1044221-HUF76445S3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044221-HUF76445S3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 310W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4965pF @ 25V Maximum Gate-Source Voltage: ±16V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044221-HUF76445S3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 310W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4965pF @ 25V
Maximum Gate-Source Voltage: ±16V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFET N-CH 60V 75A D2PAK - 598-HUF76445S3ST - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 60V 75A D2PAK
598-HUF76445S3ST
MOSFET N-CH 60V 75A D2PAK 598-HUF76445S3ST
MOSFET N-CH 60V 75A D2PAK

MOSFET N-CH 60V 75A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF76445S3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF76445S3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF76445S3ST
MOSFET N-CH 60V 75A D2PAK

MOSFET N-CH 60V 75A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUF76445S3ST-ND 1044221-HUF76445S3ST 598-HUF76445S3ST HUF76445S3ST
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF76445S3ST MOSFET N-CH 60V 75A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 60 volts 60 volts
PD 310000 milliwatts 310000 milliwatts
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