onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75829D3ST HUF75829D3ST

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044202-HUF75829D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 20V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044202-HUF75829D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 20V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75829D3ST - 1044202-HUF75829D3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75829D3ST
1044202-HUF75829D3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75829D3ST 1044202-HUF75829D3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1044202-HUF75829D3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 110W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-252AA Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 70nC @ 20V Max Input Capacitance: 1080pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1044202-HUF75829D3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 110W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-252AA
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 70nC @ 20V
Max Input Capacitance: 1080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1044202-HUF75829D3ST
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75829D3ST
Polarity N-Channel; N-Channel
V(BR)DSS 150 volts
PD 110000 milliwatts
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