The N-Channel MOSFET Transistor, part number HUF75652G3, is designed for high-performance applications with a maximum drain-source voltage of 100 V and a continuous drain current rating of 75 A at a case temperature of 25¬8C. It features an ultra-low on-resistance of 0.0067 Ohm at a gate-source voltage of 10 V, which enhances efficiency in power management. The device has a gate threshold voltage ranging from 2 V to 4 V, making it suitable for various switching applications. It is packaged in a TO-247 format and is RoHS compliant, ensuring it meets environmental standards. The transistor operates effectively within a temperature range of -55¬8C to 175¬8C, making it versatile for different operating conditions. This product is ideal for engineers looking for reliable and efficient MOSFET solutions in their designs.
MOSFET N-CH 100V 75A TO247-3
N-Channel 100V 75A (Tc) 515W (Tc) Through Hole TO-247-3
MOSFETs 75a 100VN-Ch MOSFET Product overview: HUF75652G3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75a. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75a, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-HUF75652G3 can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068303-HUF75652G3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 515W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 475nC @ 20V
Max Input Capacitance: 7585pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management, Industrial
Quantity per package: 450
N CHANNEL MOSFET, 100V, 75A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 75 A, 100 V, 0.0067 ohm, 10 V, 4 V RoHS Compliant: Yes
MOSFET N-CH 100V 75A TO-247
MOSFET N-CH 100V 75A TO247-3
100V 75A 8mΩ@75A,10V 515W 4V@250uA null TO-247-3 MOSFETs ROHS
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | HUF75652G3 | HUF75652G3-ND | 2088-HUF75652G3 | 068303-HUF75652G3 | 8078705 | 8078705P | 58K1615 | 31Y2014 | 598-HUF75652G3 | HUF75652G3 | HUF75652G3 | HUF75652G3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 75a MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75652G3 | MOSFETs | MOSFETs | N Channel Mosfet, 100V, 75A, To-247; Channel Type Onsemi | Mosfet Transistor, N Channel, 75 A, 100 V, 0.0067 Ohm, 10 V, 4 V Rohs Compliant Onsemi | MOSFET N-CH 100V 75A TO-247 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||||||
| IDSS | 75000 milliamps | 75000 milliamps | ||||||||||
| PD | 515000 milliwatts | 515 milliwatts | 515000 milliwatts | 515000 milliwatts | 515000 milliwatts |
