onsemi Single FETs, MOSFETs HUF75639S3ST

Description
N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet
Description
N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HUF75639S3STCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75639S3STCT-ND
Single FETs, MOSFETs HUF75639S3STCT-ND
N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - HUF75639S3STTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75639S3STTR-ND
Single FETs, MOSFETs HUF75639S3STTR-ND
N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Single FETs, MOSFETs - HUF75639S3STDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75639S3STDKR-ND
Single FETs, MOSFETs HUF75639S3STDKR-ND
N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 56A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639S3ST - 017080-HUF75639S3ST - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639S3ST
017080-HUF75639S3ST
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639S3ST 017080-HUF75639S3ST
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 017080-HUF75639S3ST Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Family Name: HUF75639S3S Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 130nC @ 20V Max Input Capacitance: 2000pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 56A, 10V Alternative Parts (Cross-Reference): STB45N10L; STB45N10LT4; SQM40N10-30; SQM40N10-30_GE3; Introduction Date: January 10, 2002 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 017080-HUF75639S3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Family Name: HUF75639S3S
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 130nC @ 20V
Max Input Capacitance: 2000pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 56A, 10V
Alternative Parts (Cross-Reference): STB45N10L; STB45N10LT4; SQM40N10-30; SQM40N10-30_GE3;
Introduction Date: January 10, 2002
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Quantity per package: 800

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-HUF75639S3ST
MOSFET Transistor 278-HUF75639S3ST
POWER FIELD-EFFECT TRANSISTOR, 5 Product overview: HUF75639S3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75639S3ST can be used for catalog matching and distributor lookup.

POWER FIELD-EFFECT TRANSISTOR, 5 Product overview: HUF75639S3ST from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75639S3ST can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, N-Ch, 100V, 56A, 175Deg C, 200W Rohs Compliant Onsemi - 54AH8828 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 56A, 175Deg C, 200W Rohs Compliant Onsemi
54AH8828
Mosfet, N-Ch, 100V, 56A, 175Deg C, 200W Rohs Compliant Onsemi 54AH8828
MOSFET, N-CH, 100V, 56A, 175DEG C, 200W ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 56A, 175DEG C, 200W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Single FETs, MOSFETs - HUF75639S3ST - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
HUF75639S3ST
Single FETs, MOSFETs HUF75639S3ST
MOSFET N-CH 100V 56A D2PAK

MOSFET N-CH 100V 56A D2PAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75639S3ST - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75639S3ST
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75639S3ST
MOSFET N-CH 100V 56A D2PAK

MOSFET N-CH 100V 56A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUF75639S3STCT-ND 017080-HUF75639S3ST 278-HUF75639S3ST 54AH8828 HUF75639S3ST HUF75639S3ST
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75639S3ST MOSFET Transistor Mosfet, N-Ch, 100V, 56A, 175Deg C, 200W Rohs Compliant Onsemi Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; D2PAK (TO-263AB) Bulk TO-3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Surface Mount
V(BR)DSS 100 volts 100 volts
PD 200000 milliwatts 200 milliwatts 200000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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