onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75545P3 HUF75545P3

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 007533-HUF75545P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 20V Max Input Capacitance: 3750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 800
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75545P3 - 007533-HUF75545P3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - HUF75545P3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75545P3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 75 A, 80 V, 10 Mohm, 10 V, 4 V Rohs Compliant Onsemi - 61M6633 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 007533-HUF75545P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 20V Max Input Capacitance: 3750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 800
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75545P3 - 007533-HUF75545P3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75545P3
007533-HUF75545P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75545P3 007533-HUF75545P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 007533-HUF75545P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 270W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 235nC @ 20V Max Input Capacitance: 3750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 007533-HUF75545P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 270W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 235nC @ 20V
Max Input Capacitance: 3750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 800

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel MOSFET Transistor
278-HUF75545P3
N-Channel MOSFET Transistor 278-HUF75545P3
N-CHANNEL ULTRAFET POWER MOSFET Product overview: HUF75545P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75545P3 can be used for catalog matching and distributor lookup.

N-CHANNEL ULTRAFET POWER MOSFET Product overview: HUF75545P3 from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75545P3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - HUF75545P3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75545P3-ND
Single FETs, MOSFETs HUF75545P3-ND
N-Channel 80V 75A (Tc) 270W (Tc) Through Hole TO-220-3

N-Channel 80V 75A (Tc) 270W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75545P3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75545P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75545P3
MOSFET N-CH 80V 75A TO220-3

MOSFET N-CH 80V 75A TO220-3

Supplier's Site
Mosfet Transistor, N Channel, 75 A, 80 V, 10 Mohm, 10 V, 4 V Rohs Compliant Onsemi - 61M6633 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 75 A, 80 V, 10 Mohm, 10 V, 4 V Rohs Compliant Onsemi
61M6633
Mosfet Transistor, N Channel, 75 A, 80 V, 10 Mohm, 10 V, 4 V Rohs Compliant Onsemi 61M6633
MOSFET Transistor, N Channel, 75 A, 80 V, 10 mohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 75 A, 80 V, 10 mohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
HUF75545P3
MOSFET HUF75545P3
MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET

MOSFET 75a 80V 0.010 Ohm N-Ch MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 007533-HUF75545P3 278-HUF75545P3 HUF75545P3-ND HUF75545P3 61M6633 HUF75545P3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75545P3 N-Channel MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 75 A, 80 V, 10 Mohm, 10 V, 4 V Rohs Compliant Onsemi MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 80 volts
PD 270000 milliwatts 270 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
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