onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75344G3 HUF75344G3

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 088479-HUF75344G3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 285W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 20V Max Input Capacitance: 3200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Quantity per package: 450
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 088479-HUF75344G3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 285W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 20V Max Input Capacitance: 3200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Quantity per package: 450
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75344G3 - 088479-HUF75344G3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75344G3
088479-HUF75344G3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75344G3 088479-HUF75344G3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 088479-HUF75344G3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 285W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-247 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 210nC @ 20V Max Input Capacitance: 3200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 75A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited Application Field: Used in Power Management Quantity per package: 450

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 088479-HUF75344G3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 285W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-247
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 210nC @ 20V
Max Input Capacitance: 3200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 75A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Application Field: Used in Power Management
Quantity per package: 450

Buy Now Datasheet
Single FETs, MOSFETs - HUF75344G3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75344G3-ND
Single FETs, MOSFETs HUF75344G3-ND
N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-247-3

N-Channel 55V 75A (Tc) 285W (Tc) Through Hole TO-247-3

Buy Now Datasheet
MOSFETs - 8076670 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8076670
MOSFETs 8076670
MOSFET, Fairchild, HUF75344G3

MOSFET, Fairchild, HUF75344G3

Supplier's Site
MOSFETs - 8076670P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
8076670P
MOSFETs 8076670P
MOSFET, Fairchild, HUF75344G3

MOSFET, Fairchild, HUF75344G3

Supplier's Site
MOSFETs - 1662170 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1662170
MOSFETs 1662170
MOSFET, Fairchild, HUF75344G3

MOSFET, Fairchild, HUF75344G3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 75a 55V NCh UltraFET

MOSFET 75a 55V NCh UltraFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75344G3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75344G3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75344G3
MOSFET N-CH 55V 75A TO247-3

MOSFET N-CH 55V 75A TO247-3

Supplier's Site
N Channel Mosfet, 55V, 75A, To-247; Channel Type Onsemi - 83F5501 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 55V, 75A, To-247; Channel Type Onsemi
83F5501
N Channel Mosfet, 55V, 75A, To-247; Channel Type Onsemi 83F5501
N CHANNEL MOSFET, 55V, 75A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 55V, 75A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Mosfet Transistor, N Channel, 75 A, 55 V, 0.0065 Ohm, 10 V, 4 V Rohs Compliant Onsemi - 87X8825 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 75 A, 55 V, 0.0065 Ohm, 10 V, 4 V Rohs Compliant Onsemi
87X8825
Mosfet Transistor, N Channel, 75 A, 55 V, 0.0065 Ohm, 10 V, 4 V Rohs Compliant Onsemi 87X8825
MOSFET Transistor, N Channel, 75 A, 55 V, 0.0065 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 75 A, 55 V, 0.0065 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 088479-HUF75344G3 HUF75344G3-ND 8076670 8076670P HUF75344G3 HUF75344G3 83F5501 87X8825
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75344G3 Single FETs, MOSFETs MOSFETs MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 55V, 75A, To-247; Channel Type Onsemi Mosfet Transistor, N Channel, 75 A, 55 V, 0.0065 Ohm, 10 V, 4 V Rohs Compliant Onsemi
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 55 volts
PD 285000 milliwatts
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-247; SOT3; TO-247 TO-247; TO-247-3 TO-247; To-247 TO-247; TO-247 TO-247; TO-247-3 TO-3; TO-247 TO-3
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