onsemi Single FETs, MOSFETs HUF75337P3

Description
N-Channel 55V 75A (Tc) 175W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 55V 75A (Tc) 175W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - HUF75337P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75337P3-ND
Single FETs, MOSFETs HUF75337P3-ND
N-Channel 55V 75A (Tc) 175W (Tc) Through Hole TO-220-3

N-Channel 55V 75A (Tc) 175W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75337P3 - 068291-HUF75337P3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75337P3
068291-HUF75337P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75337P3 068291-HUF75337P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068291-HUF75337P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 175W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 75A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 109nC @ 20V Max Input Capacitance: 1775pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068291-HUF75337P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 175W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 75A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 109nC @ 20V
Max Input Capacitance: 1775pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 75A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75337P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75337P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75337P3
MOSFET N-CH 55V 75A TO220-3

MOSFET N-CH 55V 75A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number HUF75337P3-ND 068291-HUF75337P3 HUF75337P3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75337P3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 55 volts
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