onsemi Single FETs, MOSFETs HUF75332P3

Description
N-Channel 55V 60A (Tc) 145W (Tc) Through Hole TO-220-3
  • Single FETs, MOSFETs - HUF75332P3FS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75332P3 - 068289-HUF75332P3 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75332P3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 55V, 60A To-220Ab; Channel Type Onsemi - 58K1603 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 55V 60A (Tc) 145W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - HUF75332P3FS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
HUF75332P3FS-ND
Single FETs, MOSFETs HUF75332P3FS-ND
N-Channel 55V 60A (Tc) 145W (Tc) Through Hole TO-220-3

N-Channel 55V 60A (Tc) 145W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75332P3 - 068289-HUF75332P3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75332P3
068289-HUF75332P3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75332P3 068289-HUF75332P3
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 068289-HUF75332P3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 145W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 85nC @ 20V Max Input Capacitance: 1300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 19 mOhm @ 60A, 10V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial Quantity per package: 800

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 068289-HUF75332P3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 145W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 85nC @ 20V
Max Input Capacitance: 1300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 19 mOhm @ 60A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Communications & Networking, Computers & Computer Peripherals, Industrial
Quantity per package: 800

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - HUF75332P3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
HUF75332P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs HUF75332P3
MOSFET N-CH 55V 60A TO220-3

MOSFET N-CH 55V 60A TO220-3

Supplier's Site
N Channel Mosfet, 55V, 60A To-220Ab; Channel Type Onsemi - 58K1603 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 55V, 60A To-220Ab; Channel Type Onsemi
58K1603
N Channel Mosfet, 55V, 60A To-220Ab; Channel Type Onsemi 58K1603
N CHANNEL MOSFET, 55V, 60A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

N CHANNEL MOSFET, 55V, 60A TO-220AB; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
HUF75332P3
MOSFET HUF75332P3
MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch

MOSFET 60a 55V 0.019 Ohm Logic Level N-Ch

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number HUF75332P3FS-ND 068289-HUF75332P3 HUF75332P3 58K1603 HUF75332P3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75332P3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 55V, 60A To-220Ab; Channel Type Onsemi MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-3; TO-220
V(BR)DSS 55 volts
PD 145000 milliwatts
Unlock Full Specs
to access all available technical data