onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - HUF75307T3ST HUF75307T3ST

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204916-HUF75307T3ST
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 2.6A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17nC @ 20V
Max Input Capacitance: 250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 90 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

MOSFET N-CH 55V 2.6A SOT-223 Product overview: HUF75307T3ST from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 2.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 2.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HUF75307T3ST can be used for catalog matching and distributor lookup.

N-Channel 55V 2.6A (Ta) 1.1W (Ta) Surface Mount SOT-223-4