The HMA121BV is a 4-pin mini-flat package optocoupler containing a gallium arsenide infrared emitting diode and a silicon phototransistor, with a current transfer ratio between 50% and 150% at 5 mA forward current and 5 V collector-emitter voltage. It features a lead pitch of 2.54 mm, a maximum standoff height of 2.4 mm, and meets UL, CSA, BSI, and VDE safety certifications with 3750 Vrms isolation. The device supports operating temperatures from -40°C to +100°C and is rated for 50 mA continuous forward current and 80 mA collector current. The emitter-collector voltage is 7 V, and collector-emitter breakdown voltage is 80 V. It is certified for infrared reflow soldering up to 230°C for 30 seconds and complies with RoHS standards. Creepage and clearance are both ≥5 mm, typically 5.2 mm.
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin Mini-Flat Box Product overview: HMA121BV from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-HMA121BV can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-HMA121BV |
| Product Name | Bipolar Transistor |
| IC(max) | 80 milliamps |
