The HMA121BR2V is a 4-pin mini-flat package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor, with a lead pitch of 2.54 mm and a maximum standoff height of 2.4 mm. It has a current transfer ratio (CTR) between 50% and 150% at I_F = 5 mA and V_CE = 5 V, and a collector-emitter breakdown voltage of 80 V. The device supports an operating temperature range of -40°C to +100°C, with an isolation voltage of 3750 V RMS for one minute. It is certified by UL, CSA, BSI, and VDE, with creepage and clearance of at least 5 mm. The part is suitable for AC line monitoring, digital logic interfacing, and telephone line applications.
OPTOISO 3.75KV TRANSISTOR 4SMD Product overview: HMA121BR2V from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-HMA121BR2V can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-HMA121BR2V |
| Product Name | 3.75KV Bipolar Transistor |
| Package Type | 4-SMD, Gull Wing |
