The H11G2SD is a surface-mount photodarlington optocoupler with a gallium arsenide infrared emitter and a silicon darlington phototransistor featuring an integral base-emitter resistor. It offers an isolated input-output voltage rating of 5300 Vac(rms), a collector-emitter breakdown voltage of 80 V, and a current transfer ratio of at least 500% at 1 mA input current. The device is rated for operation from -55°C to 100°C and meets UL 94 V-0 and UL recognized File # E90700. It is packaged in a 6-pin surface-mount configuration with a lead pitch of 2.54 mm and dimensions of 8.89 mm by 6.86 mm. The part complies with VDE 0884 for reinforced isolation and is supplied in tape and reel packaging.
Optocoupler DC-IN 1-CH Darlington With Base DC-OUT 6-Pin PDIP SMD Black T/R Product overview: H11G2SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11G2SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11G2SD |
| Product Name | SMD Bipolar Transistor |
| PD | 260 milliwatts |
