The H11G1 series are photodarlington optocouplers with a gallium arsenide infrared LED coupled to a silicon Darlington phototransistor featuring a base-emitter resistor for improved high-temperature performance. The device is available in a 6-pin dual-inline package with 0.4 inch lead spacing, measuring 0.350 inches (8.89 mm) in length. It offers an input-output isolation voltage of 5300 Vrms, a collector-emitter breakdown voltage of 100 V, and a current transfer ratio of at least 500% at an input current of 1 mA. The device is Underwriters Laboratory (UL) recognized under File# E90700 and meets RoHS compliance for lead-free soldering. Switching times include a turn-on time of 5 µs and turn-off time of 100 µs.
Optocoupler DC-IN 1-CH Darlington With Base DC-OUT 6-Pin PDIP SMD Black T/R Product overview: H11G13SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11G13SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11G13SD |
| Product Name | SMD Bipolar Transistor |
| PD | 260 milliwatts |
