The H11B2 is a photodarlington optocoupler featuring a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington transistor, designed for low power logic circuits, telecommunications, portable electronics, and interfacing systems with different potentials. It is housed in a 6-pin DIP package with a lead spacing of 0.300 in (7.62 mm). The part has a collector-emitter breakdown voltage of 30 V, a current transfer ratio ranging from 2% to 200% at 1 mA input current, and an input-output isolation voltage of 5300 Vac(rms). Operating temperature ranges from -55°C to +100°C, with a total device power dissipation of 250 mW at 25°C. It meets or exceeds all JEDEC Registered Specifications and has VDE 0884 approval available as a test option.
OPTOISO 5.3KV DARL W/BASE 6DIP Product overview: H11B2 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11B2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11B2 |
| Product Name | 5.3KV Bipolar Transistor |
| PD | 250 milliwatts |
