The H11B1VM is a 6-pin DIP general-purpose photodarlington optocoupler with a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington detector. It meets UL1577 with 4,170 VAC RMS isolation for 1 minute and complies with DIN-EN/IEC60747-5-5 for 850 V peak working insulation voltage. The device has a maximum collector-emitter voltage of 30 V, a continuous collector current of 150 mA, and a current transfer ratio of 5 to 500% at 10 mA input current. Maximum ambient operating temperature is 100 °C, and junction temperature is 125 °C. External creepage and clearance are both at least 7 mm, with insulation thickness of at least 0.5 mm. The package is a standard 6-pin DIP form factor.
DARLINGTON OUTPUT OPTOCOUPLER, 7 Product overview: H11B1VM from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11B1VM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11B1VM |
| Product Name | Bipolar Transistor |
| Package Type | Bulk |
| Packing Method | Bulk |
| IC(max) | 150 milliamps |
