The H11AV2M is a phototransistor optocoupler with a 6-pin dual in-line white package and 0.3" input-output lead spacing. It features a silicon phototransistor detector driven by a gallium arsenide infrared LED, with a collector-emitter breakdown voltage of 70 V and a current transfer ratio of 50% minimum at 10 mA forward current and 10 V collector-emitter voltage. The device supports an operating temperature range of -40°C to +100°C and is rated for 250 mW total power dissipation. It meets UL and VDE safety certifications, with 7.5 kV AC input-output isolation voltage and 850 V peak working insulation voltage. Creepage and clearance are both 7 mm, with insulation thickness of 0.5 mm.
OPTOISO 7.5KV TRANS W/BASE 6DIP Product overview: H11AV2M from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 7.5KV. Search-friendly keywords include transistor, BJT, switching, amplification, 7.5KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11AV2M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11AV2M |
| Product Name | 7.5KV Bipolar Transistor |
| PD | 250 milliwatts |
