The H11AV1SVM is a 6-pin surface-mount optocoupler consisting of a gallium arsenide infrared emitter and a silicon phototransistor, with 0.4-inch lead spacing and compliance with DIN EN/IEC60747-5-5 for safety insulation. It features an 850 Vpeak maximum working insulation voltage, 4170 VACrms isolation voltage for 1 minute, and operates from -40°C to +100°C. The device meets UL1577 safety standards and has a creepage and clearance of at least 10 mm due to its lead spacing option. The case is PDIP6 8.51x6.35, 2.54P with a temperature rating up to 175°C and a solder temperature of 260°C for 10 seconds.
6-Pin DIP High BVceo Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK Product overview: H11AV1SVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11AV1SVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11AV1SVM |
| Product Name | DIP Bipolar Transistor |
| PD | 0.1500 milliwatts |
