The H11AA3 is an AC input phototransistor optocoupler with a bipolar infrared emitter pair driving a silicon phototransistor output, designed for AC line monitoring and unknown polarity DC sensing. It is packaged in a DIP-6 case with a body size of 0.400 inches (10.16 mm) wide and lead spacing of 0.300 inches (7.62 mm). The device features built-in reverse polarity protection, a 5300 Vrms isolation voltage, and a current transfer ratio of 50% minimum at ±10 mA forward current and 10 V collector-emitter voltage. It meets UL 94 V-0 and VDE 0884 standards. Operating temperature ranges from -55°C to +100°C, with storage temperature up to +150°C.
Transistor Output Optocouplers DIP-6 PHOTO TRANS Product overview: H11AA3 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11AA3 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11AA3 |
| Product Name | DIP Bipolar Transistor |
| PD | 350 milliwatts |
