The H11A817D is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared LED driving a silicon phototransistor, designed for applications such as power supply regulators, digital logic inputs, and microprocessor interfaces. It features a collector-emitter breakdown voltage of 70 V, a continuous collector current of 50 mA, and a current transfer ratio of 300-600%. The device provides 5300 Vrms isolation and operates over a temperature range of -55°C to +100°C. It meets VDE 0884 certification when ordered with the 300 option.
5kV Optocoupler, 70V VCEO, 600% CTR, 50mA, PDIP Product overview: H11A817D300 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5kV, 70V, 50mA. Search-friendly keywords include transistor, BJT, switching, amplification, 5kV, 70V, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817D300 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817D300 |
| Product Name | 5kV 70V 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
