The H11A817C300 is a 4-pin dual in-line package optocoupler containing a gallium arsenide infrared emitting diode driving a silicon phototransistor, designed for applications such as power supply regulators and microprocessor interfaces. It features a collector-emitter breakdown voltage of 70 V, a continuous collector current of 50 mA, and an input-output isolation voltage of 5300 Vrms. The current transfer ratio is specified between 200% and 400% at 5 mA, with a collector-emitter saturation voltage of 0.2 V at 20 mA forward current. The device meets VDE 0884 isolation standards and is rated for operation from -55 °C to +100 °C. The package supports through-hole mounting and is compliant with VDE 0884 requirements as indicated by the '300' suffix in the part number.
5kV Optocoupler Transistor 70V 50mA 4-DIP Through Hole Product overview: H11A817C300 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 5kV, 70V, 50mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 5kV, 70V, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817C300 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817C300 |
| Product Name | Through-Hole 5kV 70V 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
