The H11A817C is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It has a collector-emitter breakdown voltage of 70 V, a continuous collector current rating of 50 mA, and a current transfer ratio of 200-400% at I_F = 5 mA and V_CE = 5 V. The device provides an input-output isolation voltage of 5300 VAC (rms) and operates from -55°C to +100°C. It is designed for applications such as power supply regulators, digital logic inputs, and microprocessor interfaces.
5kV Optocoupler Transistor 70V VCEO 50mA IF 400% CTR 4-DIP Product overview: H11A817C from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5kV, 70V, 50mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5kV, 70V, 50mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817C can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817C |
| Product Name | 5kV 70V 50mA DIP Bipolar Transistor |
| IC(max) | 50 milliamps |
