The H11A817BS is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor, designed for applications such as power supply regulators, digital logic inputs, and microprocessor interfaces. It has a collector-emitter breakdown voltage of 70 V, a continuous collector current rating of 50 mA, and an input-output isolation voltage of 5300 Vac(rms). The package is available in surface mount configuration with a lead spacing of 0.1 in (2.54 mm) and complies with VDE 0884 standards. The current transfer ratio ranges from 80% to 160% at 1 mA forward current and 5 V collector-emitter voltage, with a collector-emitter saturation voltage of 0.2 V at 20 mA forward current and 1 mA collector current.
1-CH Optocoupler, 5kV Isolation, 70V VCEO, 50mA, SMD Product overview: H11A817BS from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 5kV, 70V, 50mA. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 5kV, 70V, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817BS can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817BS |
| Product Name | SMD 5kV 70V 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
