The H11A817B series is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor, designed for applications such as power supply regulators and microprocessor inputs. It features a minimum collector-emitter breakdown voltage of 70 V, a continuous collector current rating of 50 mA, and an input-output isolation voltage of 5300 Vac(rms). The current transfer ratio is specified in the range of 130% to 260% at I_F = 5 mA and V_CE = 5 V. The device operates from -55°C to +100°C and has a total power dissipation of 200 mW. Rise and fall times are 2.4 to 18 µs under standard test conditions.
Optocoupler 1-CH DC-IN Transistor 70V 5kV 50mA SMD Product overview: H11A817B3S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 70V, 5kV, 50mA. Search-friendly keywords include transistor, BJT, switching, amplification, SMD, 70V, 5kV, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817B3S can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817B3S |
| Product Name | SMD 70V 5kV 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
