The H11A817B300 is a 4-pin dual in-line package optocoupler containing a gallium arsenide infrared LED driving a silicon phototransistor, designed for isolation and signal transfer in applications such as power supply regulators and microprocessor inputs. It features a 5300 Vac(rms) input-output isolation voltage, a collector-emitter breakdown voltage of 70 V, and a continuous collector current of 50 mA. The current transfer ratio is specified at 130-260% with an input current of 5 mA and a collector-emitter voltage of 5 V. The device operates from -55°C to +100°C and meets the VDE 0884 safety standard. The package is through-hole with 0.4 inch lead spacing as indicated by the '300' suffix.
Optocoupler 5kV Transistor 70V 50mA 4-DIP Through Hole Product overview: H11A817B300 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 5kV, 70V, 50mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 5kV, 70V, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817B300 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817B300 |
| Product Name | Through-Hole 5kV 70V 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
