The H11A817B is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It has a collector-emitter breakdown voltage of 70 V, a continuous collector current of 50 mA, and a current transfer ratio between 130% and 260%. The device provides 5300 Vac(rms) input-output isolation voltage and operates from -55°C to +100°C. Rise and fall times are specified at 2.4 to 18 µs under standard test conditions.
Optocoupler 5kV Transistor 70V 50mA PDIP Product overview: H11A817B from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5kV, 70V, 50mA. Search-friendly keywords include transistor, BJT, switching, amplification, 5kV, 70V, 50mA, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A817B can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A817B |
| Product Name | 5kV 70V 50mA Bipolar Transistor |
| IC(max) | 50 milliamps |
