The H11A817 series is a 4-pin dual in-line phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It provides 5300 Vac(rms) input-output isolation voltage and is available in surface mount versions with tape and reel packaging. The device has a maximum collector-emitter voltage of 70 V, continuous collector current of 50 mA, and operates from -55°C to +100°C. Current transfer ratio ranges from 300% to 600% for the H11A817D variant. It meets VDE 0884 safety standards when ordered with the appropriate suffix.
OPTOISO 5.3KV TRANSISTOR 4SMD Product overview: H11A8173SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A8173SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A8173SD |
| Product Name | 5.3KV Bipolar Transistor |
| IC(max) | 50 milliamps |
