The H11A617 series is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It has a minimum collector-emitter breakdown voltage of 70 V, a continuous collector current rating of 50 mA, and an input-forward voltage of 1.2 to 1.65 V depending on the variant. Current transfer ratio ranges from 40% to 320% across subvariants, with the H11A617B subvariant specified at 63% to 125%. The device provides an isolation voltage of 5300 Vac(rms), an isolation resistance of 10^11 Ω, and operates from -55°C to +100°C. Rise and fall times are 2.4 to 18 µs with a 100 Ω load.
OPTOISO 5.3KV TRANSISTOR 4SMD Product overview: H11A617BSD from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A617BSD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A617BSD |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Reel - TR |
