The H11A617B300W is a 4-pin dual in-line package optocoupler consisting of a gallium arsenide infrared emitting diode driving a silicon phototransistor. It features a current transfer ratio of 63-125% at I_F = 10 mA and V_CE = 5 V, a collector-emitter breakdown voltage of 70 V, and an isolation voltage of 5300 Vrms. The device operates from -55°C to +100°C and meets VDE 0884 standard with 0.4" lead spacing. It is designed for applications such as power supply regulators, digital logic inputs, and microprocessor interfacing.
OPTOISO 5.3KV TRANSISTOR 4DIP Product overview: H11A617B300W from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A617B300W can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A617B300W |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Tube/Rail |
