The H11A5TVM is a 6-pin phototransistor optocoupler consisting of a gallium arsenide infrared LED and a silicon phototransistor in a dual in-line package. It offers an input-output isolation voltage of 7500 Vac(pk) and an isolation resistance of 10^11 Ω at 500 VDC, with a current transfer ratio of 30% minimum at I_F = 10 mA and V_CE = 10 V. The device is rated for operation from -40°C to +100°C and supports VDE 0884 certification. It features a 0.4" lead spacing and is available in a through-hole package variant with VDE option. The part meets UL 94 V-0 and is certified to UL and VDE safety standards.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: H11A5TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A5TVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A5TVM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
