The H11A5S is a 6-pin surface mount phototransistor optocoupler consisting of a gallium arsenide infrared LED and a silicon phototransistor. It features a collector-emitter voltage rating of 30 V, a maximum forward current of 60 mA, and a minimum current transfer ratio of 30% at 10 mA input and 10 V collector-emitter voltage. Turn-on and turn-off times are 4 µs and 2 µs respectively under standard test conditions. The device provides 7500 V pk isolation voltage and is UL and VDE recognized. The package is a surface mount dual in-line format with 0.4 inch lead spacing and complies with UL 94 V-0 flammability rating.
Transistor Output Optocouplers Optocoupler SM-DIP6 Phototransistor Product overview: H11A5S from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A5S can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A5S |
| Product Name | Bipolar Transistor |
| PD | 250 milliwatts |
