The H11A3SR2M is a six-pin dual in-line phototransistor optocoupler featuring a gallium arsenide infrared LED and silicon phototransistor. It is packaged in a surface mount configuration with tape and reel formatting, compatible with reflow soldering per a profile of 260°C for 10 seconds. The device meets UL 94 V-0 and VDE 0884 safety standards, with an isolation voltage of 7500 Vac(pk) and isolation resistance of 10¹¹ Ω. Operating temperature ranges from -40°C to +100°C. Current transfer ratio (CTR) is specified at 20% minimum for collector-emitter conditions of 10 mA and 10 V. Turn-on and turn-off times are 2 µs maximum at 100 Ω load. Total device power dissipation is 250 mW at 25°C.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: H11A3SR2M from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A3SR2M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A3SR2M |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
