The H11A2 is a 6-pin dual in-line phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode and a silicon phototransistor. It is available in black or white (with -M suffix) packages, with input-output isolation voltage ratings of 5300 Vac(rms) for the black package and 7500 Vac(pk) for the white package. The device meets UL and VDE recognition standards. Collector-emitter breakdown voltage is 30 V, and the current transfer ratio ranges from 30% to 150% at 10 mA forward current and 10 V collector-emitter voltage. The operating temperature range is -55°C to +100°C, with a maximum power dissipation of 250 mW for the total device. Package dimensions and thermal performance vary slightly between package types, with lead spacing of 0.4 inch for standardized variants. Surface mount and through-hole versions are supported.
OPTOISO 5.3KV TRANS W/BASE 6DIP Product overview: H11A2 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-H11A2 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-H11A2 |
| Product Name | 5.3KV Bipolar Transistor |
| PD | 250 milliwatts |
