onsemi TRANSISTORS - Transistors (BJT) - Single - FSB660 FSB660

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175882-FSB660 Packaging: Tape and Reel Mounting Style: SMD Transistor Type: PNP Frequency - Transition: 75MHz Categories: Discrete Semiconductor Products Supplier Device Package: 3-SSOT Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Family Part Number: FSB660 Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 350mV at 200mA, 2A DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 500mA, 2V Maximum Power: 500mW
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 1175882-FSB660 Packaging: Tape and Reel Mounting Style: SMD Transistor Type: PNP Frequency - Transition: 75MHz Categories: Discrete Semiconductor Products Supplier Device Package: 3-SSOT Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Family Part Number: FSB660 Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 350mV at 200mA, 2A DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 500mA, 2V Maximum Power: 500mW
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Suppliers

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Product
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Supplier Links
TRANSISTORS - Transistors (BJT) - Single - FSB660 - 1175882-FSB660 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - FSB660
1175882-FSB660
TRANSISTORS - Transistors (BJT) - Single - FSB660 1175882-FSB660
Manufacturer: ON Semiconductor Win Source Part Number: 1175882-FSB660 Packaging: Tape and Reel Mounting Style: SMD Transistor Type: PNP Frequency - Transition: 75MHz Categories: Discrete Semiconductor Products Supplier Device Package: 3-SSOT Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-236-3, SC-59, SOT-23-3 Current - Collector (Ic) (Maximum): 2A Voltage - Collector Emitter Breakdown (Maximum): 60V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Family Part Number: FSB660 Manufacturer Pack Quantity: 3,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 350mV at 200mA, 2A DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 500mA, 2V Maximum Power: 500mW

Manufacturer: ON Semiconductor
Win Source Part Number: 1175882-FSB660
Packaging: Tape and Reel
Mounting Style: SMD
Transistor Type: PNP
Frequency - Transition: 75MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: 3-SSOT
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Maximum): 2A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Family Part Number: FSB660
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 350mV at 200mA, 2A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 100 at 500mA, 2V
Maximum Power: 500mW

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - FSB660 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
FSB660
Discrete Semiconductor Products - Transistors - Bipolar (BJT) FSB660
TRANS PNP 60V 2A SOT23-3

TRANS PNP 60V 2A SOT23-3

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors
Product Number 1175882-FSB660 FSB660
Product Name TRANSISTORS - Transistors (BJT) - Single - FSB660 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP
Package Type SOT3; SOT23
Packing Method Tape Reel; Tape and Reel Tape Reel; Tape & Reel (TR)
TJ -55 to 150 C (-67 to 302 F)
Power Gain 100 dB
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