onsemi Single FETs, MOSFETs FQU9N25TU

Description
N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
  • Single FETs, MOSFETs - FQU9N25TUOS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU9N25TU - 1040010-FQU9N25TU - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 250V, 7.4A, Ipak; Channel Type Onsemi - 58K1533 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU9N25TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - FQU9N25TUOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQU9N25TUOS-ND
Single FETs, MOSFETs FQU9N25TUOS-ND
N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK

N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU9N25TU - 1040010-FQU9N25TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU9N25TU
1040010-FQU9N25TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU9N25TU 1040010-FQU9N25TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1040010-FQU9N25TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 7.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 420 mOhm @ 3.7A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient Application Field: Used in Automation & Process Control, Clock & Timing, Consumer Electronics, Robotics Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1040010-FQU9N25TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 7.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 420 mOhm @ 3.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Automation & Process Control, Clock & Timing, Consumer Electronics, Robotics
Quantity per package: 5,040

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
FQU9N25TU
MOSFET FQU9N25TU
MOSFET 250V N-Channel QFET

MOSFET 250V N-Channel QFET

Buy Now Datasheet
Mosfet, N-Ch, 250V, 7.4A, Ipak; Channel Type Onsemi - 58K1533 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 250V, 7.4A, Ipak; Channel Type Onsemi
58K1533
Mosfet, N-Ch, 250V, 7.4A, Ipak; Channel Type Onsemi 58K1533
MOSFET, N-CH, 250V, 7.4A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

MOSFET, N-CH, 250V, 7.4A, IPAK; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:7.4A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU9N25TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU9N25TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU9N25TU
MOSFET N-CH 250V 7.4A IPAK

MOSFET N-CH 250V 7.4A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number FQU9N25TUOS-ND 1040010-FQU9N25TU FQU9N25TU 58K1533 FQU9N25TU
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU9N25TU MOSFET Mosfet, N-Ch, 250V, 7.4A, Ipak; Channel Type Onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-3 TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 250 volts
PD 2500 to 55000 milliwatts
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