Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1040009-FQU8P10TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 6.6A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 470pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 530 mOhm @ 3.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040
P-Channel MOSFET, -100V, -6.6A, 530mΩ, IPAK Product overview: FQU8P10TU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, -100V, -6.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -100V, -6.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU8P10TU can be used for catalog matching and distributor lookup.
P-Channel 100V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
MOSFET P-CH 100V 6.6A IPAK
MOSFET, P-CH, 100V, 6.6A, 150DEG C, 44W ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1040009-FQU8P10TU | 278-FQU8P10TU | FQU8P10TUOS-ND | FQU8P10TU | FQU8P10TU | 54AH8781 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU8P10TU | P-Channel -100V -6.6A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, 100V, 6.6A, 150Deg C, 44W Rohs Compliant Onsemi |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 100 volts | |||||
| PD | 2500 to 44000 milliwatts | 2500 milliwatts |
