onsemi 100V 5.8A MOSFET Transistor FQU7N10LTU

Description
MOSFET N-CH 100V 5.8A IPAK Product overview: FQU7N10LTU from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQU7N10LTU can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 100V 5.8A IPAK Product overview: FQU7N10LTU from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQU7N10LTU can be used for catalog matching and distributor lookup.
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Suppliers

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Product
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Singapore
100V 5.8A MOSFET Transistor
285-FQU7N10LTU
100V 5.8A MOSFET Transistor 285-FQU7N10LTU
MOSFET N-CH 100V 5.8A IPAK Product overview: FQU7N10LTU from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQU7N10LTU can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 5.8A IPAK Product overview: FQU7N10LTU from ON Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 5.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 5.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-FQU7N10LTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU7N10LTU - 1040005-FQU7N10LTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU7N10LTU
1040005-FQU7N10LTU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU7N10LTU 1040005-FQU7N10LTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1040005-FQU7N10LTU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.8A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 6nC @ 5V Max Input Capacitance: 290pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1040005-FQU7N10LTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.8A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 6nC @ 5V
Max Input Capacitance: 290pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-FQU7N10LTU 1040005-FQU7N10LTU
Product Name 100V 5.8A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU7N10LTU
Polarity N-Channel N-Channel; N-Channel
PD 2500 milliwatts 2500 to 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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