onsemi Single FETs, MOSFETs FQU5N40TU

Description
N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
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Description
N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - FQU5N40TU-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
FQU5N40TU-ND
Single FETs, MOSFETs FQU5N40TU-ND
N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK

N-Channel 400V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU5N40TU - 204324-FQU5N40TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU5N40TU
204324-FQU5N40TU
TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU5N40TU 204324-FQU5N40TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 204324-FQU5N40TU Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 3.4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 13nC @ 10V Max Input Capacitance: 460pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.6 Ohm @ 1.7A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 204324-FQU5N40TU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 3.4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 13nC @ 10V
Max Input Capacitance: 460pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 1.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU5N40TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU5N40TU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU5N40TU
MOSFET N-CH 400V 3.4A IPAK

MOSFET N-CH 400V 3.4A IPAK

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 400V N-Channel QFET

MOSFET 400V N-Channel QFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number FQU5N40TU-ND 204324-FQU5N40TU FQU5N40TU FQU5N40TU
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU5N40TU Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; I-Pak TO-251-3 Short Leads, IPak, TO-251AA
V(BR)DSS 400 volts
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