onsemi FETs - Single - FQU2N90TU FQU2N90TU

Manufacturer: ON Semiconductor Win Source Part Number: 802459-FQU2N90TU Packaging: Tube Mounting Style: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900V Part Status: Obsolete (End Of Life) Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W , 50W (Tc) Popularity: High Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,040 MSL Level: 1 (Unlimited) Rds On (Maximum) at Id, Vgs: 7.2Ohm at 850mA, 10V Gate Charge (Qg) (Maximum) at Vgs: 15nC at 10V Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V Current - Continuous Drain (Id) at 25°C: 1.7A (Tc) Vgs(th) (Maximum) at Id: 5V at 250μA Maximum Vgs: ±30V