onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N90TU_WS FQU2N90TU_WS

Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1039993-FQU2N90TU_WS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: I-Pak Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 1.7A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 7.2 Ohm @ 850mA, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient