This N-Channel enhancement mode power MOSFET, part number FQD2N60C/FQU2N60C, is designed for applications requiring high voltage and current handling. It has a maximum drain-source voltage of 600V and a continuous drain current rating of 1.9A at a case temperature of 25¬8C, with a derated current of 1.14A at 100¬8C. The device features a low on-state resistance of 4.7 ohms at a gate-source voltage of 10V and a drain current of 0.95A, which contributes to efficient performance in power applications. The MOSFET is characterized by a low total gate charge of 8.5 nC, making it suitable for high-speed switching applications. It is also 100% avalanche tested, ensuring reliability under transient conditions. The operating temperature range extends from -55¬8C to +150¬8C, allowing for versatility in various environments. Additionally, the device is RoHS compliant, indicating it meets environmental regulations. This MOSFET is suitable for use in switched mode power supplies, active power factor correction, and electronic lamp ballasts, making it a viable option for engineers looking for robust performance in high-voltage applications.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 001267-FQU2N60CTU
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: I-Pak
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 12nC @ 10V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 950mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040
N-Channel 600V 1.9A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
MOSFET N-CH 600V 1.9A IPAK
600V N-Ch MOSFET, 1.9A, 4.7R, IPAK, QFET Product overview: FQU2N60CTU from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-FQU2N60CTU can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 1.9A IPAK
MOSFET, N-CH, 600V, 1.9A, 150DEG C, 44W ROHS COMPLIANT: YES
MOSFET 600V N-Channel Adv Q-FET C-Series
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 001267-FQU2N60CTU | FQU2N60CTU-ND | FQU2N60CTU | 278-FQU2N60CTU | FQU2N60CTU | 54AH8777 | FQU2N60CTU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - FQU2N60CTU | Single FETs, MOSFETs | Single FETs, MOSFETs | 600V 1.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 1.9A, 150Deg C, 44W Rohs Compliant Onsemi | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | |||||
| PD | 2500 to 44000 milliwatts | 2500 milliwatts | 44000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
