onsemi FETs - Single - FQU2N50BTU FQU2N50BTU

Description
Manufacturer: ON Semiconductor Win Source Part Number: 730956-FQU2N50BTU Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 30W Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,040 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 1.6A Rds On (Maximum) at Id, Vgs: 5.3Ohm at 800mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.7V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 230pF at 25V
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 730956-FQU2N50BTU Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 30W Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,040 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 1.6A Rds On (Maximum) at Id, Vgs: 5.3Ohm at 800mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.7V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 230pF at 25V
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Suppliers

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FETs - Single - FQU2N50BTU - 730956-FQU2N50BTU - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - FQU2N50BTU
730956-FQU2N50BTU
FETs - Single - FQU2N50BTU 730956-FQU2N50BTU
Manufacturer: ON Semiconductor Win Source Part Number: 730956-FQU2N50BTU Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: I-PAK Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA Power Dissipation (Maximum): 2.5W, 30W Popularity: Low Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 5,040 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 1.6A Rds On (Maximum) at Id, Vgs: 5.3Ohm at 800mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.7V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 8nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 230pF at 25V

Manufacturer: ON Semiconductor
Win Source Part Number: 730956-FQU2N50BTU
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: I-PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Maximum): 2.5W, 30W
Popularity: Low
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 5,040
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 1.6A
Rds On (Maximum) at Id, Vgs: 5.3Ohm at 800mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.7V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 8nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 230pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FQU2N50BTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
FQU2N50BTU
Discrete Semiconductor Products - Transistors - FETs, MOSFETs FQU2N50BTU
MOSFET N-CH 500V 1.6A IPAK

MOSFET N-CH 500V 1.6A IPAK

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 730956-FQU2N50BTU FQU2N50BTU
Product Name FETs - Single - FQU2N50BTU Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 500 volts
PD 2500 to 30000 milliwatts
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